STMicroelectronics STGWA40H65DFB2, IGBT with built-in anti-parallel ultra-fast soft-recovery freewheeling diode

. Key Electrical Parameters

Collector-Emitter Voltage VCES: 650 V

Continuous Collector Current Ic:72 A @ 25 ℃40 A @ 100 ℃ (nominal rated current)

Pulsed Collector Current Icp: 160 A

Collector-Emitter Saturation Voltage VCE(sat): Typical 1.55 V @ Ic=40 A

Gate-Emitter Voltage VGE: ±20 V (transient ±30 V)

Maximum Total Power Dissipation Ptot: 230 W (Tc=25 ℃)

Maximum Junction Temperature Tj: 175 ℃

Integrated Diode: Ultra-fast soft-recovery type, IF=38 A @ 100 ℃

Technology: Trench Gate Field-Stop technology with low tail current

IV. Applications

1) Photovoltaic & New Energy

String photovoltaic inverters, single-phase PFC (Power Factor Correction) circuits

2) Uninterruptible Power Supply (UPS)

Line-frequency / high-frequency UPS inverters, Power Conversion Systems (PCS) for energy storage

3) Charging Equipment

Auxiliary power supplies for DC EV chargers, On-Board Chargers (OBC)

4) Industrial Power & Drives

High-frequency switching power supplies, welding machines, industrial inverters, servo drivers

5) Other Fields

High-power active power filters, induction heating power supplies

ST

物料名称

IPS8200HQ

LMV321ILT

M24C08-RMN6TP

MASTERGAN4TR

SM6T33CA

STGIPN3H6O

STGWA40H65DFB

STGWA40H65DFB2

STM32F0316DIE1

STM32F0518DIE1

STM32F051K6T6

STM32F401VCT6